Wrap-Around Word-Line DRAM Cell Transistor Enabling Enhanced Read/Write Speed
Dol Sohn; Moon-Kwon Lee; Da-Eun Bang; Hyo-Jun Park; Eui-Cheol Yun; Sang-Min Kang; Min-Woo Kim; Hyuntak Jeon; Jun-Young Park
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3635561
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Cite this source
Dol Sohn; Moon-Kwon Lee; Da-Eun Bang; Hyo-Jun Park; Eui-Cheol Yun; Sang-Min Kang; Min-Woo Kim; Hyuntak Jeon; Jun-Young Park. Wrap-Around Word-Line DRAM Cell Transistor Enabling Enhanced Read/Write Speed. IEEE Transactions on Electron Devices. 2026-01. https://doi.org/10.1109/ted.2025.3635561