Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Asymmetric Drain-Engineered Vertical Tunnel Field Effect Transistor: Design, Simulation, and Performance Optimization

V. Saraswathi; N. Siddaiah

Published
Publisher
Springer Science and Business Media LLC
Journal / collection
Transactions on Electrical and Electronic Materials
Research area
Semiconductors
Source type
Journal article
DOI
10.1007/s42341-025-00644-6

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

V. Saraswathi; N. Siddaiah. Asymmetric Drain-Engineered Vertical Tunnel Field Effect Transistor: Design, Simulation, and Performance Optimization. Transactions on Electrical and Electronic Materials. 2025-06-25. https://doi.org/10.1007/s42341-025-00644-6

Download RIS