Asymmetric Dual-Gate Transistor Based on Dual-Functional h-BN for Memory and Logic Operations
Zaiwei Yang; Yihao Zhang; Jie Peng; Junlong Tian
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.6c00818
The original publisher provides the full text and its access options.
Cite this source
Zaiwei Yang; Yihao Zhang; Jie Peng; Junlong Tian. Asymmetric Dual-Gate Transistor Based on Dual-Functional h-BN for Memory and Logic Operations. ACS Applied Electronic Materials. 2026-07-03. https://doi.org/10.1021/acsaelm.6c00818