Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell
Jiahui Duan; Sanwar Ahmed Ovy; Po-Kai Hsu; Zijian Zhao; Thomas Kämpfe; Xiao Gong; Shimeng Yu; Vijaykrishnan Narayanan; Sumitha George; Kai Ni
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50572.2025.11353898
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Cite this source
Jiahui Duan; Sanwar Ahmed Ovy; Po-Kai Hsu; Zijian Zhao; Thomas Kämpfe; Xiao Gong; Shimeng Yu; Vijaykrishnan Narayanan; Sumitha George; Kai Ni. Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353898