Model-based Raman simulations for optimized metrology in nanosheet transistor devices
Stefan Schoeche; Aron Cepler; Marjorie Cheng; Jander Cruz; Roy Koret; Lior Baltiansky; Maor Asher; Alexander Levy; Igor Turovets; Daniel Schmidt
- Published
- Publisher
- SPIE
- Journal / collection
- Metrology, Inspection, and Process Control XL
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1117/12.3092270
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Cite this source
Stefan Schoeche; Aron Cepler; Marjorie Cheng; Jander Cruz; Roy Koret; Lior Baltiansky; Maor Asher; Alexander Levy; Igor Turovets; Daniel Schmidt. Model-based Raman simulations for optimized metrology in nanosheet transistor devices. Metrology, Inspection, and Process Control XL. 2026-04-08. https://doi.org/10.1117/12.3092270