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Research literature / Conference paper

Study of the Influence of DX-Centers on the Characteristics of a Pseudomorphic High-Electron-Mobility Transistor (pHEMT)

Alexander V. Sapozhnikov; Roman S. Kryukov; Vadim V. Perepelovsky; Anatoly L. Dudin; Artyom I. Baranov

Published
Publisher
IEEE
Journal / collection
2026 ElCon Conference of Young Researchers in Micro and Nanoelectronics, Electrical Engineering Materials, Plasmas and Fields, Photonics and Electro-Optics (ElCon-MN)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/elcon-mn69838.2026.11417121

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Alexander V. Sapozhnikov; Roman S. Kryukov; Vadim V. Perepelovsky; Anatoly L. Dudin; Artyom I. Baranov. Study of the Influence of DX-Centers on the Characteristics of a Pseudomorphic High-Electron-Mobility Transistor (pHEMT). 2026 ElCon Conference of Young Researchers in Micro and Nanoelectronics, Electrical Engineering Materials, Plasmas and Fields, Photonics and Electro-Optics (ElCon-MN). 2026-02-03. https://doi.org/10.1109/elcon-mn69838.2026.11417121

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