A P-Channel GaN Insulated Gate Bipolar Transistor with Outstanding Current Capability
Mengyao Zhao; Jie Ma; Tianchun Nie; Qiwei Peng; Denggui Wang; Jianjun Zhou; Sheng Li; Jiaxing Wei; Siyang Liu; Long Zhang; Weifeng Sun
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/ispsd62843.2025.11118008
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Cite this source
Mengyao Zhao; Jie Ma; Tianchun Nie; Qiwei Peng; Denggui Wang; Jianjun Zhou; Sheng Li; Jiaxing Wei; Siyang Liu; Long Zhang; Weifeng Sun. A P-Channel GaN Insulated Gate Bipolar Transistor with Outstanding Current Capability. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2025-06-01. https://doi.org/10.23919/ispsd62843.2025.11118008