First Experimental Demonstration of Dual-Sided N/P FETs in Filp FET (FFET) on 300 mm Wafers for Stacked Transistor Technology in Sub-1nm Nodes
Heng Wu; Weihai Bu; Yandong Ge; Yanbang Chu; Jiacheng Sun; Jianxiang Jin; Yongqin Wu; Ye Ren; Falong Zhou; Lijie Zhang; Jack Wu; Ming Li; Jin Kang; Runsheng Wang; Xin Zhang; Ru Huang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/vlsitechnologyandcir65189.2025.11075188
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Heng Wu; Weihai Bu; Yandong Ge; Yanbang Chu; Jiacheng Sun; Jianxiang Jin; Yongqin Wu; Ye Ren; Falong Zhou; Lijie Zhang; Jack Wu; Ming Li; Jin Kang; Runsheng Wang; Xin Zhang; Ru Huang. First Experimental Demonstration of Dual-Sided N/P FETs in Filp FET (FFET) on 300 mm Wafers for Stacked Transistor Technology in Sub-1nm Nodes. 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2025-06-08. https://doi.org/10.23919/vlsitechnologyandcir65189.2025.11075188