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Electro‐Thermal Analysis of a Double‐Gate Vertical Tunnel Field‐Effect Transistor Under Multiple Power‐Dissipation Regimes

Ajeet Kumar; Bhubesh Chander Joshi

Published
Publisher
Wiley
Journal / collection
Advanced Theory and Simulations
Research area
Semiconductors
Source type
Journal article
DOI
10.1002/adts.70556

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Ajeet Kumar; Bhubesh Chander Joshi. Electro‐Thermal Analysis of a Double‐Gate Vertical Tunnel Field‐Effect Transistor Under Multiple Power‐Dissipation Regimes. Advanced Theory and Simulations. 2026-09. https://doi.org/10.1002/adts.70556

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