Asymmetric charge trapping and emission kinetics in SiO 2 /HfO 2 for accurate transistor reliability simulation
Guang-Hua 光华 Xu 徐; Shiyou 时友 Chen 陈; Yue-Yang 岳阳 Liu 刘
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/ae7db4
The original publisher provides the full text and its access options.
Cite this source
Guang-Hua 光华 Xu 徐; Shiyou 时友 Chen 陈; Yue-Yang 岳阳 Liu 刘. Asymmetric charge trapping and emission kinetics in SiO 2 /HfO 2 for accurate transistor reliability simulation. Chinese Physics B. 2026-09-01. https://doi.org/10.1088/1674-1056/ae7db4