A Novel Numerical Modeling for p-type Nanowire Ballistic Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistor
He Cheng; Zhijia Yang; Chao Zhang; Zhipeng Zhang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/isset66828.2025.11184911
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Cite this source
He Cheng; Zhijia Yang; Chao Zhang; Zhipeng Zhang. A Novel Numerical Modeling for p-type Nanowire Ballistic Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistor. 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET). 2025-07-24. https://doi.org/10.1109/isset66828.2025.11184911