A Highly Linear 2-Transistor Monolithic Temperature Sensor Employing p-GaN HEMTs for GaN Power ICs
Fangqing Li; Yifan Dong; Xinyu Sun; Haodong Wang; Xin Chen; Yaozong Zhong; Hongwei Gao; Haoran Qie; Tengfei Li; Gaofei Zhi; Yu Zhou; Qian Sun; Hui Yang
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.23919/ispsd62843.2025.11117444
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Fangqing Li; Yifan Dong; Xinyu Sun; Haodong Wang; Xin Chen; Yaozong Zhong; Hongwei Gao; Haoran Qie; Tengfei Li; Gaofei Zhi; Yu Zhou; Qian Sun; Hui Yang. A Highly Linear 2-Transistor Monolithic Temperature Sensor Employing p-GaN HEMTs for GaN Power ICs. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2025-06-01. https://doi.org/10.23919/ispsd62843.2025.11117444