Theoretical Capacitance of Metal-Oxide-Two-Dimensional-Semiconductor Structure and Semiconductor Defect Measurement
Daoyu Zhang; Xiangyu Wei
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- The Journal of Physical Chemistry C
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.jpcc.6c01072
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Cite this source
Daoyu Zhang; Xiangyu Wei. Theoretical Capacitance of Metal-Oxide-Two-Dimensional-Semiconductor Structure and Semiconductor Defect Measurement. The Journal of Physical Chemistry C. 2026-06-18. https://doi.org/10.1021/acs.jpcc.6c01072