Design of Ferroelectric Field-Effect Transistor (FeFET)-Based Computing-in-Memory Architecture with Energy-Efficient and Low Latency for Edge AI Computing
Chengyu He; Wei Li; Jianjun Li; Qiquan Li; Zhiang Xie; Tao Du
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronics15040841
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Cite this source
Chengyu He; Wei Li; Jianjun Li; Qiquan Li; Zhiang Xie; Tao Du. Design of Ferroelectric Field-Effect Transistor (FeFET)-Based Computing-in-Memory Architecture with Energy-Efficient and Low Latency for Edge AI Computing. Electronics. 2026-02-16. https://doi.org/10.3390/electronics15040841