Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics
Hwan Jin Kim; Hyojin Yang; Haesung Kim; Sejun Park; Ha-Neul Lee; Sung-Jin Choi; Dong Myong Kim; Dae Hwan Kim; Min-Kyu Park; Jong-Ho Bae
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2026.109358
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Cite this source
Hwan Jin Kim; Hyojin Yang; Haesung Kim; Sejun Park; Ha-Neul Lee; Sung-Jin Choi; Dong Myong Kim; Dae Hwan Kim; Min-Kyu Park; Jong-Ho Bae. Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics. Solid-State Electronics. 2026-08. https://doi.org/10.1016/j.sse.2026.109358