Enhanced-Mode NiO/-Ga2O3 Heterojunction Field-Effect Transistor: A TCAD Study
Duc-Minh Truong; Ngoc-Hung Nguyen; Huy-Binh Do
- Published
- Publisher
- Ho Chi Minh City University of Technology and Engineering
- Journal / collection
- Journal of Technical Education Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.54644/jte.2025.1665
The original publisher provides the full text and its access options.
Cite this source
Duc-Minh Truong; Ngoc-Hung Nguyen; Huy-Binh Do. Enhanced-Mode NiO/-Ga2O3 Heterojunction Field-Effect Transistor: A TCAD Study. Journal of Technical Education Science. 2025-09-15. https://doi.org/10.54644/jte.2025.1665