Sub‐20 nm Ferroelectric Junctionless Gate‐All‐Around Metal‐Oxide‐Semiconductor Field‐Effect Transistor for Low‐Power Applications: Switching Performances and Subthreshold Circuit Analysis
Ibrahim Rahmani; Hichem Ferhati; Zohir Dibi; Faycal Djeffal
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202500186
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Cite this source
Ibrahim Rahmani; Hichem Ferhati; Zohir Dibi; Faycal Djeffal. Sub‐20 nm Ferroelectric Junctionless Gate‐All‐Around Metal‐Oxide‐Semiconductor Field‐Effect Transistor for Low‐Power Applications: Switching Performances and Subthreshold Circuit Analysis. physica status solidi (a). 2025-06-28. https://doi.org/10.1002/pssa.202500186