Current Status of Research on High‐Electron‐Mobility Transistor Devices on Gallium Nitride and Aluminum Nitride Substrates
Hongtao Yang; Songyang Lv; Qiubo Li; Defu Sun; Zhongxin Wang; Yixuan Li; Jingliang Liu; Guodong Wang; Shouzhi Wang; Lihuan Wang; Jiaoxian Yu; Lei Zhang
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials Technologies
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/admt.71354
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Cite this source
Hongtao Yang; Songyang Lv; Qiubo Li; Defu Sun; Zhongxin Wang; Yixuan Li; Jingliang Liu; Guodong Wang; Shouzhi Wang; Lihuan Wang; Jiaoxian Yu; Lei Zhang. Current Status of Research on High‐Electron‐Mobility Transistor Devices on Gallium Nitride and Aluminum Nitride Substrates. Advanced Materials Technologies. 2026-09-24. https://doi.org/10.1002/admt.71354