Large-scale optimization of doping profiles in 4H–SiC metal–oxide–semiconductor field-effect transistors
P. Brungi; P. Andrei
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0320204
The original publisher provides the full text and its access options.
Cite this source
P. Brungi; P. Andrei. Large-scale optimization of doping profiles in 4H–SiC metal–oxide–semiconductor field-effect transistors. AIP Advances. 2026-03-01. https://doi.org/10.1063/5.0320204