Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array Transistor

Jeonghyeon Yun; Suyeon Kim; Dongyeong Kim; Jewon Park; Sinwook Kim; Ryun Kang; Chaehyuk Lim; Sowon Kim; Hyeona Seo; Hyerin Lee; Juwon Lee; Geon Kim; Myoungjin Lee

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Transactions on Device and Materials Reliability
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/tdmr.2026.3684027

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Jeonghyeon Yun; Suyeon Kim; Dongyeong Kim; Jewon Park; Sinwook Kim; Ryun Kang; Chaehyuk Lim; Sowon Kim; Hyeona Seo; Hyerin Lee; Juwon Lee; Geon Kim; Myoungjin Lee. Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array Transistor. IEEE Transactions on Device and Materials Reliability. 2026-06. https://doi.org/10.1109/tdmr.2026.3684027

Download RIS