Electrical Behavior at Cryogenic Temperature of the Radiation-Tolerant Hourglass MOS Transistor
Carlos Alfredo Pelcastre Ortega; Mónico Linares Aranda; Daniel Ferrusca Rodríguez; Ismael Martínez Ramos; Ignacio Juárez Ramírez
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2026.3701856
The original publisher provides the full text and its access options.
Cite this source
Carlos Alfredo Pelcastre Ortega; Mónico Linares Aranda; Daniel Ferrusca Rodríguez; Ismael Martínez Ramos; Ignacio Juárez Ramírez. Electrical Behavior at Cryogenic Temperature of the Radiation-Tolerant Hourglass MOS Transistor. IEEE Transactions on Device and Materials Reliability. 2026. https://doi.org/10.1109/tdmr.2026.3701856