28Nm Fd-Soi Transistor Hot-Carrier Injection At Cryogenic Temperature
G. Durand; F. E. Bergamaschi; M. Cassé; X. Federspiel; P. Galy; E. Vincent; I. Ionica
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2026.3703987
The original publisher provides the full text and its access options.
Cite this source
G. Durand; F. E. Bergamaschi; M. Cassé; X. Federspiel; P. Galy; E. Vincent; I. Ionica. 28Nm Fd-Soi Transistor Hot-Carrier Injection At Cryogenic Temperature. IEEE Transactions on Device and Materials Reliability. 2026. https://doi.org/10.1109/tdmr.2026.3703987