The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode
Teng-Min Fan; Chen Wang; Cong Yi; Chen-Hao Zhou; Yu-Li Su; Yun-Shao Cho; Dong-Sing Wuu; Shui-Yang Lien
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2025.3559225
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Cite this source
Teng-Min Fan; Chen Wang; Cong Yi; Chen-Hao Zhou; Yu-Li Su; Yun-Shao Cho; Dong-Sing Wuu; Shui-Yang Lien. The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode. IEEE Transactions on Device and Materials Reliability. 2025-06. https://doi.org/10.1109/tdmr.2025.3559225