Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor
Jan Lettens; Ilias Vandevenne; Marina Avramenko; Henk Vrielinck; Etienne Goovaerts; Peter Moens; Sofie Cambré
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0268307
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Cite this source
Jan Lettens; Ilias Vandevenne; Marina Avramenko; Henk Vrielinck; Etienne Goovaerts; Peter Moens; Sofie Cambré. Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor. Applied Physics Letters. 2025-05-19. https://doi.org/10.1063/5.0268307