A Capacitance Based Threshold Voltage analysis of raised source drain Junctionless field effect transistor
Rikhit Swargiary; Kaushik Chandra Deva Sarma
- Published
- Publisher
- Springer Science and Business Media LLC
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.21203/rs.3.rs-6593959/v1
This is a preprint or other posted paper. Check the original source for its review and publication status.
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Cite this source
Rikhit Swargiary; Kaushik Chandra Deva Sarma. A Capacitance Based Threshold Voltage analysis of raised source drain Junctionless field effect transistor. Springer Science and Business Media LLC. 2025-06-06. https://doi.org/10.21203/rs.3.rs-6593959/v1