Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

3-D Monolithic-Integrated BEOL-Compatible Oxide Semiconductor FETs on GaN HEMTs: CEO-GaN

Gerui Zheng; Hanjie Li; Liyan Huang; Jiawei Xie; Zijie Zheng; Hanlin Xie; Yuxuan Wang; Xuanqi Chen; Wenhua Gu; Geok Ing Ng; Xiao Gong

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Transactions on Electron Devices
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/ted.2026.3677393

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Gerui Zheng; Hanjie Li; Liyan Huang; Jiawei Xie; Zijie Zheng; Hanlin Xie; Yuxuan Wang; Xuanqi Chen; Wenhua Gu; Geok Ing Ng; Xiao Gong. 3-D Monolithic-Integrated BEOL-Compatible Oxide Semiconductor FETs on GaN HEMTs: CEO-GaN. IEEE Transactions on Electron Devices. 2026-06. https://doi.org/10.1109/ted.2026.3677393

Download RIS