Extreme Environment Durable Microprocessor Design Based on Silicon Carbide Junction Field Effect Transistor-Resistor Technology
Michael J. Krasowski; Philip G. Neudeck; Norman F. Prokop; Christina M. Adams; Lawrence C. Greer; David J. Spry
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Access
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/access.2026.3729473
The original publisher provides the full text and its access options.
Cite this source
Michael J. Krasowski; Philip G. Neudeck; Norman F. Prokop; Christina M. Adams; Lawrence C. Greer; David J. Spry. Extreme Environment Durable Microprocessor Design Based on Silicon Carbide Junction Field Effect Transistor-Resistor Technology. IEEE Access. 2026. https://doi.org/10.1109/access.2026.3729473