MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations
Md. Ibrahim Ahmed; Sharnali Islam
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.70519
The original publisher provides the full text and its access options.
Cite this source
Md. Ibrahim Ahmed; Sharnali Islam. MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations. Advanced Electronic Materials. 2026-08-29. https://doi.org/10.1002/aelm.70519