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Research literature / Journal article

Sub-200 kW Lateral Sapphire-Based Epitaxial GaN Photoconductive Semiconductor Switch

Li’ao Yang; Tianjiao Shen; Fuyin Liu; Bohan Li; Ripin Wang; Muyu Yi; Langning Wang; Tao Xun

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2025.3604513

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Li’ao Yang; Tianjiao Shen; Fuyin Liu; Bohan Li; Ripin Wang; Muyu Yi; Langning Wang; Tao Xun. Sub-200 kW Lateral Sapphire-Based Epitaxial GaN Photoconductive Semiconductor Switch. IEEE Electron Device Letters. 2025-11. https://doi.org/10.1109/led.2025.3604513

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