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Research literature / Conference paper

Multi-to-Single Channel HEMT (M2S-HEMT): An E-Mode p-GaN Gate Power Transistor Decoupling Threshold Voltage and ON-Resistance

Jiawei Cui; Xingyu Fu; Yuanyang Xu; Zhenghao Chen; Sihang Liu; Hengyuan Qi; Junjie Yang; Maojun Wang; Xuelin Yang; Bo Shen; Jin Wei

Published
Publisher
IEEE
Journal / collection
2025 IEEE International Electron Devices Meeting (IEDM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/iedm50572.2025.11353530

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Jiawei Cui; Xingyu Fu; Yuanyang Xu; Zhenghao Chen; Sihang Liu; Hengyuan Qi; Junjie Yang; Maojun Wang; Xuelin Yang; Bo Shen; Jin Wei. Multi-to-Single Channel HEMT (M2S-HEMT): An E-Mode p-GaN Gate Power Transistor Decoupling Threshold Voltage and ON-Resistance. 2025 IEEE International Electron Devices Meeting (IEDM). 2025-12-06. https://doi.org/10.1109/iedm50572.2025.11353530

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