Scaling behavior in a sub-5-nm n -type monolayer Ge Te transistor
Weiwei Ju; Mengshuo Kang; Pan Gao; Tongwei Li; Qingxiao Zhou; Xinxin Wang; Yanan Tang; Xiaotian Sun; Ruge Quhe; Jing Lu
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review Applied
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/r23v-kgmw
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Cite this source
Weiwei Ju; Mengshuo Kang; Pan Gao; Tongwei Li; Qingxiao Zhou; Xinxin Wang; Yanan Tang; Xiaotian Sun; Ruge Quhe; Jing Lu. Scaling behavior in a sub-5-nm n -type monolayer Ge Te transistor. Physical Review Applied. 2026-02-25. https://doi.org/10.1103/r23v-kgmw