In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications
Zhen Yang; Yuxiang Yang; Baiqian Wang; Yaoyu Tao; Zelun Pan; Lei Cai; Teng Zhang; Longhao Yan; Xianbin Li; Yuchao Yang
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/advs.202521815
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Cite this source
Zhen Yang; Yuxiang Yang; Baiqian Wang; Yaoyu Tao; Zelun Pan; Lei Cai; Teng Zhang; Longhao Yan; Xianbin Li; Yuchao Yang. In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications. Advanced Science. 2026-01-21. https://doi.org/10.1002/advs.202521815