Effect of Transistor and Interconnect Scaling on Aging in Advanced SRAM
Zhe Zhang; Mahta Mayahinia; Christian Weis; Norbert Wehn; Mehdi Tahoori; Sani Nassif; Grigor Tshagharyan; Gurgen Harutyunyan; Yervant Zorian
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2026.3693656
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Cite this source
Zhe Zhang; Mahta Mayahinia; Christian Weis; Norbert Wehn; Mehdi Tahoori; Sani Nassif; Grigor Tshagharyan; Gurgen Harutyunyan; Yervant Zorian. Effect of Transistor and Interconnect Scaling on Aging in Advanced SRAM. IEEE Transactions on Device and Materials Reliability. 2026. https://doi.org/10.1109/tdmr.2026.3693656