Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
Yukinori Shima; Daisuke Kurosaki; Masami Jincho; Mitsuo Mashiyama; Masahiro Watanabe; Kayo Kumakura; Seiji Yasumoto; Masayoshi Dobashi; Junichi Koezuka; Motoharu Saito; Koji Kusunoki; Shunpei Yamazaki
- Published
- Publisher
- Wiley
- Journal / collection
- Journal of the Society for Information Display
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jsid.70067
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Yukinori Shima; Daisuke Kurosaki; Masami Jincho; Mitsuo Mashiyama; Masahiro Watanabe; Kayo Kumakura; Seiji Yasumoto; Masayoshi Dobashi; Junichi Koezuka; Motoharu Saito; Koji Kusunoki; Shunpei Yamazaki. Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process. Journal of the Society for Information Display. 2026-04-08. https://doi.org/10.1002/jsid.70067