Buried Interface Engineering via Homogenized Two-Dimensional Phase Enables High-Mobility Tin Perovskite Photosynaptic Transistor
Bo Wei Zhang; Dongxu He; Julian A. Steele; Tingting Mei; Zijian Feng; Zitong Wang; Cheng Zhang; Shanshan Ding; Sichun Yang; Hongzhe Xu; Chun-Ho Lin; Miaoqiang Lyu
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.5c05338
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Cite this source
Bo Wei Zhang; Dongxu He; Julian A. Steele; Tingting Mei; Zijian Feng; Zitong Wang; Cheng Zhang; Shanshan Ding; Sichun Yang; Hongzhe Xu; Chun-Ho Lin; Miaoqiang Lyu. Buried Interface Engineering via Homogenized Two-Dimensional Phase Enables High-Mobility Tin Perovskite Photosynaptic Transistor. Nano Letters. 2026-01-01. https://doi.org/10.1021/acs.nanolett.5c05338