A High‐Hole Mobility Tellurium Transistor With Electron‐Donating Passivation Layer for Scalable, High‐Throughput Electronics
Taehyun Nam; Seung Min Lee; Chungryeol Lee; Changhyeon Lee; Sunwoo Jeong; Seunghwan Seo; Youson Kim; Jeong‐ik Park; Seokhyun Hong; Hyung Joong Yun; Kibum Kang; Hocheon Yoo; Junhwan Choi; Sung Gap Im
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.202527125
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Cite this source
Taehyun Nam; Seung Min Lee; Chungryeol Lee; Changhyeon Lee; Sunwoo Jeong; Seunghwan Seo; Youson Kim; Jeong‐ik Park; Seokhyun Hong; Hyung Joong Yun; Kibum Kang; Hocheon Yoo; Junhwan Choi; Sung Gap Im. A High‐Hole Mobility Tellurium Transistor With Electron‐Donating Passivation Layer for Scalable, High‐Throughput Electronics. Advanced Functional Materials. 2026-04-23. https://doi.org/10.1002/adfm.202527125