Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gate
Dongkai ZHANG; Qing HU; Yulong GUO; Ying ZHAI; Xushan LIU; Zixu WANG; Guohao YU; Dawei YAN
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.75.20251343
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Cite this source
Dongkai ZHANG; Qing HU; Yulong GUO; Ying ZHAI; Xushan LIU; Zixu WANG; Guohao YU; Dawei YAN. Forward transport, degradation, and breakdown of hydrogen-ion-implanted GaN high electron mobility transistor gate. Acta Physica Sinica. 2026. https://doi.org/10.7498/aps.75.20251343