Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems
USDOE National Nuclear Security Administration (NNSA); Caitlin Chapin; USDOE Laboratory Directed Research and Development (LDRD) Program; Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Published
- Publisher
- Office of Scientific and Technical Information (OSTI)
- Research area
- Semiconductors
- Source type
- Report
- DOI
- 10.2172/3017709
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Cite this source
USDOE National Nuclear Security Administration (NNSA); Caitlin Chapin; USDOE Laboratory Directed Research and Development (LDRD) Program; Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States). Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems. Office of Scientific and Technical Information (OSTI). 2026-02-01. https://doi.org/10.2172/3017709