Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function
Shufan Xu; Kunyang Liu; Kiichi Niitsu; Hirofumi Shinohara
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2025.3574796
The original publisher provides the full text and its access options.
Cite this source
Shufan Xu; Kunyang Liu; Kiichi Niitsu; Hirofumi Shinohara. Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function. IEEE Transactions on Device and Materials Reliability. 2025-09. https://doi.org/10.1109/tdmr.2025.3574796