A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation
Trupti R. Lenka; Tanjim Rahman; Mano B. S. Muthu; Injamamul H. Emu; Hieu P. T. Nguyen
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Microsystem Technologies
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s00542-025-05927-9
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Cite this source
Trupti R. Lenka; Tanjim Rahman; Mano B. S. Muthu; Injamamul H. Emu; Hieu P. T. Nguyen. A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation. Microsystem Technologies. 2025-08-12. https://doi.org/10.1007/s00542-025-05927-9