P‐5: Competing Degradation Mechanisms in Flexible Dual‐Gate InGaZnO Thin‐Film Transistor under Mechanical Stresses
Jilin Li; Peidong Li; Yuhan Zhang; Runxiao Shi; Yushen Hu; Xiaofei Li; Man Wong; Shengdong Zhang; Lei Lu; Hailong Jiao
- Published
- Publisher
- Wiley
- Journal / collection
- SID Symposium Digest of Technical Papers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/sdtp.18454
The original publisher provides the full text and its access options.
Cite this source
Jilin Li; Peidong Li; Yuhan Zhang; Runxiao Shi; Yushen Hu; Xiaofei Li; Man Wong; Shengdong Zhang; Lei Lu; Hailong Jiao. P‐5: Competing Degradation Mechanisms in Flexible Dual‐Gate InGaZnO Thin‐Film Transistor under Mechanical Stresses. SID Symposium Digest of Technical Papers. 2025-06. https://doi.org/10.1002/sdtp.18454