A proposed channel for ultra-short metal-oxide-semiconductor field-effect transistor: monolayer zirconium disulfide (ZrS2)
Hong Li; Xinqi Yuan; Shuai Sun; Fengbin Liu; Jing Lu
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science and Engineering: B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mseb.2025.118481
The original publisher provides the full text and its access options.
Cite this source
Hong Li; Xinqi Yuan; Shuai Sun; Fengbin Liu; Jing Lu. A proposed channel for ultra-short metal-oxide-semiconductor field-effect transistor: monolayer zirconium disulfide (ZrS2). Materials Science and Engineering: B. 2025-11. https://doi.org/10.1016/j.mseb.2025.118481