The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology
Trace Wallace; Nathaniel A. Dodds; Aldo I. Vidana; R. Nathan Nowlin; B. Dodd; H. J. Barnaby; M. Spear; J. Neuendank; Jeffrey S. Kauppila; Timothy D. Haeffner; Grant D. Poe; Sean T. Vibbert; Lloyd W. Massengill; J. L. Taggart; B. Foran; Stefano Bonaldo
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nuclear Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tns.2025.3589259
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Cite this source
Trace Wallace; Nathaniel A. Dodds; Aldo I. Vidana; R. Nathan Nowlin; B. Dodd; H. J. Barnaby; M. Spear; J. Neuendank; Jeffrey S. Kauppila; Timothy D. Haeffner; Grant D. Poe; Sean T. Vibbert; Lloyd W. Massengill; J. L. Taggart; B. Foran; Stefano Bonaldo. The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology. IEEE Transactions on Nuclear Science. 2025-08. https://doi.org/10.1109/tns.2025.3589259