Using High Dielectric Constant HfO₂/ZrO₂ Superlattice Dielectrics to Enhance Ge Stacked Nanosheets Gate-All-Around Transistor Performance
Yi-Wen Lin; Chen-You Wei; Kai-Wei Huang; Tzu-I Kao; Jun-Wei Wu; Guang-Li Luo; Yung-Chun Wu; Fu-Ju Hou
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2025.3566763
The original publisher provides the full text and its access options.
Cite this source
Yi-Wen Lin; Chen-You Wei; Kai-Wei Huang; Tzu-I Kao; Jun-Wei Wu; Guang-Li Luo; Yung-Chun Wu; Fu-Ju Hou. Using High Dielectric Constant HfO₂/ZrO₂ Superlattice Dielectrics to Enhance Ge Stacked Nanosheets Gate-All-Around Transistor Performance. IEEE Electron Device Letters. 2025-07. https://doi.org/10.1109/led.2025.3566763