Metal vacancy engineering breaks hole mobility barriers in semiconductor oxide photoelectrodes
Li Xu; Suyuan Cheng; Bing He; Liming Liu; Ziyi Qiao; Lingyi Li; Yingkui Yang; Xueqin Liu
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Journal of Energy Chemistry
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.jechem.2026.05.014
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Cite this source
Li Xu; Suyuan Cheng; Bing He; Liming Liu; Ziyi Qiao; Lingyi Li; Yingkui Yang; Xueqin Liu. Metal vacancy engineering breaks hole mobility barriers in semiconductor oxide photoelectrodes. Journal of Energy Chemistry. 2026-08. https://doi.org/10.1016/j.jechem.2026.05.014