Skip to content
Independent research & intelligence
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Proximity‐Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High‐Performance Ferroelectric Field‐Effect Transistor

Kyung Do Kim; Min Kyu Yeom; Han Sol Park; Gwangsik Jeon; Cheol Seong Hwang

Published
Publisher
Wiley
Journal / collection
Advanced Materials
Research area
Semiconductors
Source type
Journal article
DOI
10.1002/adma.202509088

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Kyung Do Kim; Min Kyu Yeom; Han Sol Park; Gwangsik Jeon; Cheol Seong Hwang. Proximity‐Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High‐Performance Ferroelectric Field‐Effect Transistor. Advanced Materials. 2025-08-21. https://doi.org/10.1002/adma.202509088

Download RIS