Corrections to “Suppressing Interface Traps Density of Top-Gate MoS 2 Transistor via H 2 O Presoak for HfO 2 ”
Kaiyue He; Zhanqi Li; Yijing Yang; Yifu Sun; Lingyu Zhang; Ruhai Liu; Maguang Zhu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2026.3706248
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Cite this source
Kaiyue He; Zhanqi Li; Yijing Yang; Yifu Sun; Lingyu Zhang; Ruhai Liu; Maguang Zhu. Corrections to “Suppressing Interface Traps Density of Top-Gate MoS 2 Transistor via H 2 O Presoak for HfO 2 ”. IEEE Electron Device Letters. 2026-08. https://doi.org/10.1109/led.2026.3706248