Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor
Wentian Gao; Andre Wachowiak; Thomas Mikolajick; Uwe Schroeder; Roberto Guido
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Functional Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adfm.77470
The original publisher provides the full text and its access options.
Cite this source
Wentian Gao; Andre Wachowiak; Thomas Mikolajick; Uwe Schroeder; Roberto Guido. Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor. Advanced Functional Materials. 2026-08-10. https://doi.org/10.1002/adfm.77470