Design and Performance Analysis of Quadruple Gate InAlN/GaN MOS-High Electron Mobility Transistor
S. K. Hima Bindhu; Yogesh Kumar Verma; Kamal Bhatia
- Published
- Publisher
- Premier Science
- Journal / collection
- Premier Journal of Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.70389/pjs.100248
The original publisher provides the full text and its access options.
Cite this source
S. K. Hima Bindhu; Yogesh Kumar Verma; Kamal Bhatia. Design and Performance Analysis of Quadruple Gate InAlN/GaN MOS-High Electron Mobility Transistor. Premier Journal of Science. 2026-01-31. https://doi.org/10.70389/pjs.100248