Highly sensitive field-effect transistor sensor based on ZnO/TiO2 for quantification of aflatoxin G2 with optimized initial measurement
Seyed Saman Nemati; Mohammad Hosein Salemi Seresht; Gholamreza Dehghan; Sohrab Ahmadi-Kandjani; Yaser Abdi
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Scientific Reports
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41598-025-19543-0
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Cite this source
Seyed Saman Nemati; Mohammad Hosein Salemi Seresht; Gholamreza Dehghan; Sohrab Ahmadi-Kandjani; Yaser Abdi. Highly sensitive field-effect transistor sensor based on ZnO/TiO2 for quantification of aflatoxin G2 with optimized initial measurement. Scientific Reports. 2025-10-13. https://doi.org/10.1038/s41598-025-19543-0